JPS60109232A - マイクロ波プラズマ処理方法 - Google Patents

マイクロ波プラズマ処理方法

Info

Publication number
JPS60109232A
JPS60109232A JP21613683A JP21613683A JPS60109232A JP S60109232 A JPS60109232 A JP S60109232A JP 21613683 A JP21613683 A JP 21613683A JP 21613683 A JP21613683 A JP 21613683A JP S60109232 A JPS60109232 A JP S60109232A
Authority
JP
Japan
Prior art keywords
discharge tube
substrate
plasma
plasma density
reciprocation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21613683A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0572097B2 (en]
Inventor
Noriaki Yamamoto
山本　則明
Fumio Shibata
柴田　史雄
Tsunehiko Tsubone
恒彦 坪根
Yutaka Kaneko
豊 金子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP21613683A priority Critical patent/JPS60109232A/ja
Publication of JPS60109232A publication Critical patent/JPS60109232A/ja
Publication of JPH0572097B2 publication Critical patent/JPH0572097B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP21613683A 1983-11-18 1983-11-18 マイクロ波プラズマ処理方法 Granted JPS60109232A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21613683A JPS60109232A (ja) 1983-11-18 1983-11-18 マイクロ波プラズマ処理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21613683A JPS60109232A (ja) 1983-11-18 1983-11-18 マイクロ波プラズマ処理方法

Publications (2)

Publication Number Publication Date
JPS60109232A true JPS60109232A (ja) 1985-06-14
JPH0572097B2 JPH0572097B2 (en]) 1993-10-08

Family

ID=16683827

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21613683A Granted JPS60109232A (ja) 1983-11-18 1983-11-18 マイクロ波プラズマ処理方法

Country Status (1)

Country Link
JP (1) JPS60109232A (en])

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63207131A (ja) * 1987-02-24 1988-08-26 Japan Steel Works Ltd:The プラズマ処理装置
JPS6481225A (en) * 1987-09-24 1989-03-27 Hitachi Ltd Plasma treating device
JPH06196447A (ja) * 1993-03-18 1994-07-15 Hitachi Ltd プラズマ処理装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58168230A (ja) * 1982-03-30 1983-10-04 Fujitsu Ltd マイクロ波プラズマ処理方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58168230A (ja) * 1982-03-30 1983-10-04 Fujitsu Ltd マイクロ波プラズマ処理方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63207131A (ja) * 1987-02-24 1988-08-26 Japan Steel Works Ltd:The プラズマ処理装置
JPS6481225A (en) * 1987-09-24 1989-03-27 Hitachi Ltd Plasma treating device
JPH06196447A (ja) * 1993-03-18 1994-07-15 Hitachi Ltd プラズマ処理装置

Also Published As

Publication number Publication date
JPH0572097B2 (en]) 1993-10-08

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